STW43NM60N mosfets equivalent, n-channel power mosfets.
Type STW43NM60N
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VDSS (@Tjmax) 650 V
RDS(on) max <0.095 Ω
ID 35 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistan.
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET ass.
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefor.
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